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HY27US08561A - 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

HY27US08561A_4532056.PDF Datasheet

Part No.

HY27US08561A HY27US16561A HY27SS08561A HY27SS16561A HY27SS08561A-FPCP HY27SS08561A-TCP HY27SS08561A-FCP HY27SS08561A-SPCP HY27SS08561A-SMP HY27SS16561A-SMP HY27SS08561A-SCP HY27US08561A-FPIB HY27US08561A-FIS HY27SS16561A-FEP HY27SS08561A-FEP

Description

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

File Size

430.42K / 47 Page

Maker

Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08561M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $5.08

100: $4.82

1000: $4.57

Email: oulindz@gmail.com

Contact us

Homepage

http://www.hynix.com/eng/

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Full text search : 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

Related Part Number

PART	Description	Maker
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H55S2622JFR-60M H55S2532JFR-60M H55S2622JFR-75M H5	256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O	Hynix Semiconductor
K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic SAMSUNG[Samsung semiconductor]
H55S2562JFR-60M H55S2562JFR-75M H55S2562JFR-A3M	256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O	Hynix Semiconductor
K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic

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